MRF134
The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V
Designed for wideband large–signal amplifier and oscillator Product Image applications up to 400 MHz range.
Product Specifications
- Part Number
- MRF134
- Description
- The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V
- Min Frequency(MHz)
- 5
- Max Frequency(MHz)
- 400
- Bias Voltage(V)
- 28.0
- Pout(W)
- 5.00
- Gain(dB)
- 11.00
- Efficiency(%)
- 50
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- N–Channel enhancement mode
- Guaranteed 28V, 150 MHz Performance Output Power = 5.0 watts Minimum Gain = 11 dB Efficiency = 55% (Typ.
- Smal land Large Signal Characterization
- Typical Performance at 400 MHz, 28V, 5.0W Output = 10.6 dB gain
- 100% Test for Load Mismatch at all Phase Angles with 30:1 VSWR
- Low Noise Figure: 2.0 dB (Typ.) at 200 mA, 150 MHz
- Excellent Thermal Stability, Ideally Suited for Class A Operation
- 100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)