MRF150
RF Power MOSFET 150W, to 150MHz, 50V
Designed primarily for linear large-signal output stages up to 150 MHz.
Product Specifications
- Part Number
- MRF150
- Description
- RF Power MOSFET 150W, to 150MHz, 50V
- Min Frequency(MHz)
- 5
- Max Frequency(MHz)
- 150
- Bias Voltage(V)
- 50.0
- Pout(W)
- 150.00
- Gain(dB)
- 17.00
- Efficiency(%)
- 45
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- Superior High Order IMD - IMD(d3) (150W PEP): –32dB (Typ.), IMD(d11) (150W PEP): –60dB (Typ.)
- Specified 50V, 30MHz Characteristics - Output Power = 150 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)
- 100% Test for Load Mismatch at all Phase Angels
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)