MRF151G
1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Product Specifications
- Part Number
- MRF151G
- Description
- 1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
- Min Frequency(MHz)
- 5
- Max Frequency(MHz)
- 175
- Bias Voltage(V)
- 50.0
- Pout(W)
- 300.00
- Gain(dB)
- 14.00
- Efficiency(%)
- 50
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- Guaranteed Performance at 175 MHz, 50 V:
- Nitride Passivated Die for Enhanced Reliability
- Ruggedness Tested at Rated Output Power
- Low Thermal Resistance — 0.35°C/W
- Efficiency — 50%
- Gain — 14 dB (16 dB Typ)
- Output Power — 300 W
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)