MRF154
Broadband RF Power MOSFET 600W, to 80MHz, 50V
Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.
Product Specifications
- Part Number
- MRF154
- Description
- Broadband RF Power MOSFET 600W, to 80MHz, 50V
- Min Frequency(MHz)
- 2
- Max Frequency(MHz)
- 100
- Bias Voltage(V)
- 50.0
- Pout(W)
- 600.00
- Gain(dB)
- 17.00
- Efficiency(%)
- 45
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- N–Channel enhancement mode MOSFET
- Specified 50 volts, 30 MHz Characteristics - Output power = 600 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)