MRF166W
The RF MOSFET Line 40W, 500MHz, 28V
Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.
Product Specifications
- Part Number
- MRF166W
- Description
- The RF MOSFET Line 40W, 500MHz, 28V
- Min Frequency(MHz)
- 30
- Max Frequency(MHz)
- 500
- Bias Voltage(V)
- 28.0
- Pout(W)
- 40.00
- Gain(dB)
- 14.00
- Efficiency(%)
- 50
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- N–Channel enhancement mode MOSFET
- Typical performance at 175 MHz, 28 Vdc: Output power = 40 W, Gain = 17 dB, Efficiency = 60%
- Push–Pull Configuration Reduces Even Numbered Harmonics
- Low Crss — 4.0 pF @ VDS = 28 V
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
- Facilitates Manual Gain Control, ALC and Modulation Techniques
- Excellent Thermal Stability Ideally Suited for Class A Operation
- Guaranteed performance at 500 MHz, 28 Vdc: Output power = 40 W, Gain = 14 dB, Efficiency = 50%
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)