MRF174
The RF MOSFET Line 125W, 200MHz
Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.
Product Specifications
- Part Number
- MRF174
- Description
- The RF MOSFET Line 125W, 200MHz
- Min Frequency(MHz)
- 5
- Max Frequency(MHz)
- 200
- Pout(W)
- 125.00
- Gain(dB)
- 9.00
- Efficiency(%)
- 50
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- N–Channel Enhancement Mode MOSFET
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc
- Facilitates Manual Gain Control, ALC and Modulation Techniques
- Excellent Thermal Stability; ideally Suite for Class A Operations
- Guaranteed Performance at 150 MHz, 28 Vdc: Output power = 125 W, Minimum gain = 9.0 dB,Efficiency = 50% (min.)
- Low Noise Figure — 3.0 dB (Typ.) at 2.0 A, 150 MHz
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)