MRF275L
TMOS
Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Product Specifications
- Part Number
- MRF275L
- Description
- TMOS
- Min Frequency(MHz)
- 5
- Max Frequency(MHz)
- 500
- Bias Voltage(V)
- 28.0
- Pout(W)
- 100.00
- Gain(dB)
- 8.80
- Efficiency(%)
- 55
Features
- N-Channel Enhancement Mode Device
- Low Thermal Resistance
- 100% Ruggedness Tested at Rated Output Power
- Guaranteed performance @ 500 MHz, 28 Vdc: Output Power — 100 W, Power gain — 8.8 dB (Typ.), Efficiency — 55% (Typ.)
- Low Crss — 17 pF typ. @ VDS = 28 V
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)