MRF587
Bipolar
Designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
Product Specifications
- Part Number
- MRF587
- Description
- Bipolar
- Min Frequency(MHz)
- 100
- Max Frequency(MHz)
- 500
- Bias Voltage(V)
- 15.0
- Pout(W)
- 0.17
- Gain(dB)
- 11.00
- Efficiency(%)
- 12
Features
- Low Noise Figure: NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA
- Low Intermodulation Distortion: TB3 = –70 dB, DIN = 125 dB µV
- High Power Gain: GU(max) = 16.5 dB (typ.) @ f = 500 MHz
- All Gold Metal System
- Ion Implanted
- High fT — 5.5 GHz
- Nichrome Emitter Ballast Resistors
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)