MSAT-N25
NIP Diode Attenuator Shunt Element
A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range.
Product Specifications
- Part Number
- MSAT-N25
- Description
- NIP Diode Attenuator Shunt Element
- Breakdown Voltage, Minimum(V)
- 200
- Resistance(Ohm)
- 1.50
- Thermal Resistance(°C/W)
- 20.0
- Min Frequency(MHz)
- 100
- Max Frequency(MHz)
- 10000
Features
- Low Distortion Harmonics at 85 dBc Typical
- Broadband performance, beyond 10 GHz
- Low Insertion loss & high attenuation range, 27 dB