MSS25-143-H27
Silicon Schottky P-Type Diodes: Low Barrier
MACOM’s Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general, they require a small forward bias (5 ~ 50 µA) for small power levels below -20 dBm when used as microwave detectors.
Product Specifications
- Part Number
- MSS25-143-H27
- Description
- Silicon Schottky P-Type Diodes: Low Barrier
- Vf(V)
- 0.2600
- Vb
- 3.00
- Total Capacitance(pF)
- 0.080
- Dynamic Resistance(ohms)
- 60.0
Features
- Superior 1/f noise.
- Passivated with silicon nitride.
- Low barrier height.
- Better temperature stability than zero bias Schottky diode.