MSS30-442-B41

Medium Barrier Silicon Schottky Diodes

MACOM's MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode.

Product Specifications

Part Number
MSS30-442-B41
Description
Medium Barrier Silicon Schottky Diodes
Vf(V)
0.4000
Vb
3.00
Total Capacitance(pF)
0.120
Dynamic Resistance(ohms)
17.0
Package Category
Beamlead
Package
B42

Features

  • VF , RD and CJ matching options
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices

Applications

  • ISM

Technical Resources

Datasheet


Order from MACOM

MSS30-442-B41
Medium Barrier Silicon Schottky Diodes