MSS30-442-B41
Medium Barrier Silicon Schottky Diodes
MACOM's MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode.
Product Specifications
- Part Number
- MSS30-442-B41
- Description
- Medium Barrier Silicon Schottky Diodes
- Vf(V)
- 0.4000
- Vb
- 3.00
- Total Capacitance(pF)
- 0.120
- Dynamic Resistance(ohms)
- 17.0
Features
- VF , RD and CJ matching options
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Chip, beam lead or packaged devices
Applications
- ISM