MSS30-442-E45

Low Barrier Silicon Schottky Diodes

MACOM's MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.

Data Sheet Get a Sample Order Now Get a Quote Tech Support Product Inquiry
  1. Home
  2. Products
  3. RF/Microwave & mmWave
  4. Diodes
  5. Schottky Diodes
  6. Schottky Mixer and Detector Diodes
  7. MSS30-442-E45

Product Specifications

Part Number
MSS30-442-E45
Description
Low Barrier Silicon Schottky Diodes
Vf(V)
0.2900
Vb
2.00
Total Capacitance(pF)
0.150
Dynamic Resistance(ohms)
22.0

Features

  • VF , RD and CJ matching options
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices

Applications

  • ISM

Technical Resources

Datasheet

Order from MACOM

MSS30-442-E45
Schottky Diode,Beamlead, E45-1
Order Get a Quote Get a Sample