MSS30-B46-H40
Silicon Schottky Bridge Quad Diodes
MACOM's MSS CR Series of Schottky crossover quad diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Barrier heights for LO power levels from 3 dBm to +17 dBm are available.
Product Specifications
- Part Number
- MSS30-B46-H40
- Description
- Silicon Schottky Bridge Quad Diodes
- Vf(V)
- 0.3000
- Vb
- 2.00
- Total Capacitance(pF)
- 0.280
- Dynamic Resistance(ohms)
- 25.0
Features
- Available in four barrier heights
- Beam lead or packaged devices
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
Applications
- ISM