MSS30-B53-E45

Silicon Schottky Bridge Quad Diodes

MACOM's MSS CR Series of Schottky crossover quad diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Barrier heights for LO power levels from 3 dBm to +17 dBm are available.

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Product Specifications

Part Number
MSS30-B53-E45
Description
Silicon Schottky Bridge Quad Diodes
Vf(V)
0.3000
Vb
2.00
Total Capacitance(pF)
0.270
Dynamic Resistance(ohms)
15.0

Features

  • Available in four barrier heights
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Beam lead or packaged devices

Technical Resources

Datasheet

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MSS30-B53-E45
Com, Schottky-Beamlead-Pkg E45-1
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