MSS39-144-0402

P-Type Medium Barrier Si Single

MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHz

Data Sheet Get a Sample Order Now Get a Quote Tech Support Product Inquiry
  1. Home
  2. Products
  3. RF/Microwave & mmWave
  4. Diodes
  5. Schottky Diodes
  6. Schottky Mixer and Detector Diodes
  7. MSS39-144-0402

Product Specifications

Part Number
MSS39-144-0402
Description
P-Type Medium Barrier Si Single
Vf(V)
0.3800
Vb
3.50
Total Capacitance(pF)
0.110

Features

  • Very low 1/f Noise
  • Chip, beam lead or packaged devices
  • Detector applications to 40 GHz

Technical Resources

Data Sheet

Order from MACOM

MSS39-144-0402
P-Type Medium Barrier Si Single
Order Get a Quote Get a Sample