MSS39-146-B10B

P-Type Silicon Schottky Diodes

MACOM's MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHz.

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Product Specifications

Part Number
MSS39-146-B10B
Description
P-Type Silicon Schottky Diodes
Vf(V)
0.3800
Vb
3.50
Total Capacitance(pF)
0.080

Features

  • Very low 1/f Noise
  • Chip, beam lead or packaged devices
  • Detector applications to 40 GHz

Applications

  • ISM

Technical Resources

Datasheet

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MSS39-146-B10B
Diode, Schottky, Die, B10B
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