MSS39-152-0805-2

P-Type Medium Barrier Si Single

MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHz

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Product Specifications

Part Number
MSS39-152-0805-2
Description
P-Type Medium Barrier Si Single
Vf(V)
0.3800
Vb
3.50
Total Capacitance(pF)
0.210

Features

  • Very low 1/f Noise
  • Chip, beam lead or packaged devices
  • Detector applications to 40 GHz

Technical Resources

Data Sheet

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MSS39-152-0805-2
P-Type Medium Barrier Si Single
Order Get a Quote Get a Sample