MSS50-146-B10B

High Barrier Silicon Schottky Diodes

MACOM's MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.

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Product Specifications

Part Number
MSS50-146-B10B
Description
High Barrier Silicon Schottky Diodes
Vf(V)
0.5000
Vb
4.00
Total Capacitance(pF)
0.070
Dynamic Resistance(ohms)
18.0
Package Category
Beam Lead
Package
B10B

Features

  • VF , RD and CJ matching options
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices

Applications

  • ISM

Technical Resources

Datasheet

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MSS50-146-B10B
Schottky Diode,Beamlead, B10B
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