MSS50-244-B20
High Barrier Silicon Schottky Diodes
MACOM's MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.
Product Specifications
- Part Number
- MSS50-244-B20
- Description
- High Barrier Silicon Schottky Diodes
- Vf(V)
- 0.5000
- Vb
- 4.00
- Total Capacitance(pF)
- 0.150
- Dynamic Resistance(ohms)
- 16.0
- Package Category
- Beam Lead
- Package
- B20
Features
- VF , RD and CJ matching options
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Chip, beam lead or packaged devices
Applications
- ISM