MSS50-B46-B45

Silicon Schottky Bridge Quad Diodes

MACOM's MSS CR Series of Schottky crossover quad diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Barrier heights for LO power levels from 3 dBm to +17 dBm are available.

Product Specifications

Part Number
MSS50-B46-B45
Description
Silicon Schottky Bridge Quad Diodes
Vf(V)
0.5000
Vb
4.00
Total Capacitance(pF)
0.100
Dynamic Resistance(ohms)
20.0

Features

  • Available in four barrier heights
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Beam lead or packaged devices

Technical Resources

Datasheet


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MSS50-B46-B45
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