MSS50-B53-B45
Silicon Schottky Bridge Quad Diodes
MACOM's MSS CR Series of Schottky crossover quad diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Barrier heights for LO power levels from 3 dBm to +17 dBm are available.
Product Specifications
- Part Number
- MSS50-B53-B45
- Description
- Silicon Schottky Bridge Quad Diodes
- Vf(V)
- 0.5000
- Vb
- 4.00
- Total Capacitance(pF)
- 0.200
- Dynamic Resistance(ohms)
- 15.0
Features
- Available in four barrier heights
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Beam lead or packaged devices
Applications
- ISM