MSS50-CR53-H40
Silicon Schottky N-Type Diodes: High Barrier
MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer and detector performance is obtained with LO power of +2 dBm to +8 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.
Product Specifications
- Part Number
- MSS50-CR53-H40
- Description
- Silicon Schottky N-Type Diodes: High Barrier
- Vf(V)
- 0.5000
- Vb
- 4.00
- Total Capacitance(pF)
- 0.330
- Dynamic Resistance(ohms)
- 15.0
Features
- VF, RD and CJ matching options.
- Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Chip, beam lead or packaged devices.