MSS60-253-H30
Extra High Barrier Silicon Schottky Diodes
The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.
Product Specifications
- Part Number
- MSS60-253-H30
- Description
- Extra High Barrier Silicon Schottky Diodes
- Vf(V)
- 625.0000
- Vb
- 3.50
- Dynamic Resistance(ohms)
- 12.0
- Junction Capacitance(pF)
- 0.350
- Package
- H30
Features
- VF, RD and CJ Matching Options
- Chip, Beam Lead and Packaged Devices
- Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available