NPA1006A
GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz
The NPA1006A is a GaN on silicon amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package.
The NPA1006A is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.
Product Specifications
- Part Number
- NPA1006A
- Description
- GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz
- Min Frequency(MHz)
- 20
- Max Frequency(MHz)
- 1000
- Supply Voltage(V)
- 28
- PSAT(W)
- 12.5
- Gain(dB)
- 14.0
- Efficiency
- 65
- Test Freq(GHz)
- 0.90
- Package Category
- 6x5 mm 8-lead PDFN
Features
- GaN on Si HEMT D-Mode Amplifier
- Suitable for Linear & Saturated Applications
- Broadband Operation from 20 - 1000 MHz
- 50 Ω Input Matched, Output Unmatched
- 28 V Operation
- 14 dB Gain @ 900 MHz
- 65% Drain Efficiency @ 900 MHz
- 100% RF Tested
- Lead-Free 6 x 5 mm 8-lead PDFN Package
- Halogen-Free “Green” Mold Compound
- RoHS* Compliant