NPA1008A
GaN Amplifier 28 V, 5 W, 20 - 2700 MHz
The NPA1008A is an integrated GaN on silicon power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 24-lead QFN plastic package.
The NPA1008A is ideally suited for general purpose narrowband to broadband applications.
Product Specifications
- Part Number
- NPA1008A
- Description
- GaN Amplifier 28 V, 5 W, 20 - 2700 MHz
- Min Frequency(MHz)
- 20
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 28
- PSAT(W)
- 5.0
- Gain(dB)
- 12.0
- Efficiency
- >45
- Test Freq(GHz)
- 1.90
- Package
- 4x4 mm
- Package Category
- PQFN
Features
- GaN on Si HEMT D-Mode Integrated Amplifier
- 100% RF Tested
- 45% Drain Efficiency
- 28 V Operation
- 50 Ω Input Matched
- Broadband Operation from 20 - 2700 MHz
- Suitable for linear and saturated applications
- Lead-Free 4 x 4 mm 24-lead PQFN Package
- RoHS* Compliant