NPT25100B
GaN Amplifier 28 V, 125 W, 2.1 - 2.7 GHz
The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange.
Product Specifications
- Part Number
- NPT25100B
- Description
- GaN Amplifier 28 V, 125 W, 2.1 - 2.7 GHz
- Min Frequency(MHz)
- 2100
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 125.0
- Gain(dB)
- 16.5
- Test Freq(GHz)
- 2.50
- PSAT(dBm)
- 51
Features
- High Reliability Gold Metallization Process
- Thermally Enhanced Industry Standard Package
- 100% RF Tested
- Characterized for Operation up to 32V
- 10W Linear Power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency
- 90W P3dB CW Power
- 125W P3dB Peak Envelope Power
- RoHS Compliant