NPT35015
GaN Amplifier 28 V, 18 W, 3.3 - 3.8 GHz
The NPT35015 GaN HEMT is a power transistor optimized for 3.3 - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 18 W. This transistor is assembled in an industry standard surface mount plastic package.
Product Specifications
- Part Number
- NPT35015
- Description
- GaN Amplifier 28 V, 18 W, 3.3 - 3.8 GHz
- Min Frequency(MHz)
- 3300
- Max Frequency(MHz)
- 3800
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 18.0
- Gain(dB)
- 11.0
- Test Freq(GHz)
- 3.50
- PSAT(dBm)
- 43
Features
- Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz
- Thermally Enhanced Industry Standard Package
- 100% RF tested
- Characterized for Operation up to 32V
- 1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency
- 25W P3dB peak Envelope Power
- 18W P3dB CW Power
- Subject to EAR99 Export Contyrol
- High Reliability Gold Metallization Process
- RoHS Compliant
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
- Surfacing Mounting Instructions - Footprint Guidelines
- Moisture Effects on the Soldering of Plastic Encapsulated Devices