NPTB00004B
GaN Power Transistor, 28 V, 5 W DC - 6 GHz
The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.
Product Specifications
- Part Number
- NPTB00004B
- Description
- GaN Power Transistor, 28 V, 5 W DC - 6 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Supply Voltage(V)
- 28
- PSAT(W)
- 5.0
- Gain(dB)
- 14.8
- Efficiency
- >50
- Test Freq(GHz)
- 2.50
- Package
- SOIC8
- Package Category
- Plastic
Features
- 57 % Drain Efficiency @ 2.5 GHz
- GaN on Si HEMT D-Mode Transistor
- Tunable from DC - 6 GHz
- Industry standard SOIC plastic package
- 28V Operation
- RoHS* Compliant
- 100 % RF Tested
- 14.8 dB Gain @ 2.5 GHz
- 28 V Operation
- Suitable for linear and saturated applications