PTRA087008NB-V1
High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTRA087008NB-V1
- Description
- High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz
- Min Frequency(NHz)
- 500
- Max Frequency(MHz)
- 1000
- Gain(dB)
- 18
- Efficiency(%)
- 52
- Operating Voltage(V)
- 48
- Package Category
- Plastic
Features
- Asymmetric design: Main P1dB = 245 W Typ; Peak P1dB = 380 W Typ
- Typical pulsed CW performance; 805 MHz; 48 V; Doherty configuration: Output power at P3dB = 650 W; Efficiency = 52%; Gain = 19.5 dB
- Capable of handling 10:1 VSWR @48 V; 30 W (WCDMA) output power
- Integrated ESD protection
- RoHS compliant