PTRA095908NB-V1
High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz
The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced plastic overmold package with earless flange.
Product Specifications
- Part Number
- PTRA095908NB-V1
- Description
- High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz
- Min Frequency(NHz)
- 920
- Max Frequency(MHz)
- 960
- Gain(dB)
- 18
- Efficiency(%)
- 52
- Operating Voltage(V)
- 48
- Package Category
- Surface Mount
Features
- Asymmetric Doherty designMain: P1dB = 250 W Typ
- Peak: P1dB = 400 W Typ
- Typical pulsed CW performance; 942 MHz; 48 V; Doherty configuration; 10 ?s; 10% duty cycleOutput power at P1dB = 160 W
- Output power at P3dB = 520 W
- Efficiency = 58% (POUT = 109 W)
- Gain = 19 dB (POUT = 109 W)