PTRA097008NB-V1
High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz
The PTRA097008NB is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTRA097008NB-V1
- Description
- High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz
- Min Frequency (MHz)
- 500
- Max Frequency(MHz)
- 1000
- P3dB Output Power(W)
- 600
- Gain(dB)
- 19.0
- Efficiency(%)
- 49
- Operating Voltage(V)
- 48
- Package Category
- Plastic
- Form
- Packaged Discrete Transistor
- Technology
- LDMOS
Features
- Broadband internal input and output matching
- Asymmetric design: Main P1dB = 300 W typ; Peak P1dB = 400 W typ
- Typical pulsed CW performance (10 ?s; 10% duty cycle; class AB test); 942 MHz; 48 V; combined outputs; Doherty configuration: Output power at P1dB = 180 W; Output power at P3dB = 600 W; Efficiency = 52%; Gain = 19 dB
- Capable of handing 10:1 VSWR at 48 V; 89 W (CW)output power
- Pb-free; RoHS compliant