PTRA097058NB-V1
High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz
The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTRA097058NB-V1
- Description
- High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz
- Min Frequency(NHz)
- 730
- Max Frequency(MHz)
- 960
- Gain(dB)
- 18
- Efficiency(%)
- 48
- Operating Voltage(V)
- 48
- Package Category
- Plastic
Features
- Asymmetric design
- Main: P1dB = 250 W typical
- Peak: P1dB = 500 W typical
- Typical pulsed CW performance; 960 MHz; 48 V; 10 ?s; 10% duty cycle; class AB test; Doherty configuration
- Output power at P1dB = 630 W
- Output power at P3dB = 800 W
- Efficiency = 55%
- Gain = 19 dB
- Integrated ESD protection