PTRA097058NB-V1
High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz
The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTRA097058NB-V1
- Description
- High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz
- Min Frequency (MHz)
- 730
- Max Frequency(MHz)
- 960
- P3dB Output Power(W)
- 800
- Gain(dB)
- 18.0
- Efficiency(%)
- 48
- Operating Voltage(V)
- 48
- Package Category
- Plastic
- Form
- Packaged Discrete Transistor
- Technology
- LDMOS
Features
- Broadband internal input and output matching
- Asymmetric design Main: P1dB = 250 W typical Peak: P1dB = 500 W typical
- Typical pulsed CW performance; 960 MHz; 48 V; 10 μs; 10% duty cycle; class AB test; Doherty configuration Output power at P1dB = 630 W Output power at P3dB = 800 W Efficiency = 55% Gain = 19 dB
- Integrated ESD protection