PTVA035002EV-V1
High Power RF LDMOS FET 500 W; 50 V; 390 - 450 MHz
The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTVA035002EV-V1
- Description
- High Power RF LDMOS FET 500 W; 50 V; 390 - 450 MHz
- Min Frequency(MHz)
- 390
- Max Frequency(MHz)
- 450
- Peak Output Power(W)
- 450
- Gain(dB)
- 18
- Efficiency(%)
- 64
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Bolt Down
Features
- High gain and efficiency
- Integrated ESD protection
- Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS-compliant
- Capable of withstanding a 13:1 load mismatch at 57 dBm under pulsed conditions: 12 ?sec pulse width; 10% duty cycle