PTVA04250

High Power RF LDMOS FETs 250 W; 50 V; 470 - 806 MHz

The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with an advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

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Product Specifications

Part Number: PTVA04250
Description: High Power RF LDMOS FETs 250 W; 50 V; 470 - 806 MHz
Min Frequency(MHz): 470
Max Frequency(MHz): 806
Peak Output Power(W): 250
Gain(dB): 19.0
Efficiency(%): 26
Operating Voltage(V): 50
Form: Packaged Discrete Transistor
Package Category: Earless, Bolt Down
Technology: LDMOS

Features

Input matched
Integrated ESD protection
Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
Low thermal resistance
RoHS compliant
Capable of withstanding a 10:1 VSWR at 55W average power under DVB-T signal condition

Technical Resources

Data Sheet

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PTVA042502EC-V1

LDMOS RF Transistor, 470?806MHz, 250W, i

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PTVA042502FC-V1

LDMOS RF Transistor, 470?806MHz, 250W, i

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