PTVA047002EV-V1
High Power RF LDMOS FET 700 W; 50 V; 470 - 806 MHz
The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTVA047002EV-V1
- Description
- High Power RF LDMOS FET 700 W; 50 V; 470 - 806 MHz
- Min Frequency(MHz)
- 470
- Max Frequency(MHz)
- 806
- Peak Output Power(W)
- 700
- Gain(dB)
- 18
- Efficiency(%)
- 29
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Bolt Down
Features
- Integrated ESD protection
- Low thermal resistance
- High gain
- Thermally enhanced package
- RoHS compliant
- Capable of withstanding a 10:1 VSWR at 130 W average power under DVB-T signal condition
- Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)