PTVA101K02EV-V1
High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz
The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTVA101K02EV-V1
- Description
- High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz
- Min Frequency(MHz)
- 1030
- Max Frequency(MHz)
- 1090
- Peak Output Power(W)
- 900
- Gain(dB)
- 18
- Efficiency(%)
- 65
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Bolt Down
Features
- High gain and effi ciency
- Integrated ESD protection
- Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant
- Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE�S pulse condition; (32?S ON / 18?S OFF) X 80;LTDF = 6.4%.