PTVA102001EA-V1
High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz
The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTVA102001EA-V1
- Description
- High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz
- Min Frequency(MHz)
- 960
- Max Frequency(MHz)
- 1600
- Peak Output Power(W)
- 200
- Gain(dB)
- 18
- Efficiency(%)
- 60
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Bolt Down
Features
- Capable of handling 10:1 VSWR @50 V; 200 W (CW) output power
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS compliant