PTVA12350

High Power RF LDMOS FETs 350 W; 50 V; 1200 - 1400 MHz

The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with an advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

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Product Specifications

Part Number: PTVA12350
Description: High Power RF LDMOS FETs 350 W; 50 V; 1200 - 1400 MHz
Min Frequency(MHz): 1200
Max Frequency(MHz): 1400
Peak Output Power(W): 350
Gain(dB): 17.0
Efficiency(%): 55
Operating Voltage(V): 50

Features

Broadband internal input and output matching
High gain and efficiency
Integrated ESD protection
Low thermal resistance
Excellent ruggedness
Pb-free and RoHS compliant

Technical Resources

Datasheet

PTVA123501EFC.pdf

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PTVA123501EC-V2

LDMOS RF Transistor, 1200?1400MHz, 375W,

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PTVA123501FC-V1

LDMOS RF Transistor, 1200?1400MHz, 375W,

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