PTVA12350

High Power RF LDMOS FETs 350 W; 50 V; 1200 - 1400 MHz

The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with an advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTVA12350
Description
High Power RF LDMOS FETs 350 W; 50 V; 1200 - 1400 MHz
Min Frequency(MHz)
21
Max Frequency(MHz)
1400
Gain(dB)
17
Efficiency(%)
55
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Earless

Features

  • High gain and efficiency
  • Integrated ESD protection
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant

Technical Resources

Data Sheet


Order from MACOM

PTVA123501EC-V2
LDMOS RF Transistor, 1200?1400MHz, 375W,
PTVA123501FC-V1
LDMOS RF Transistor, 1200?1400MHz, 375W,