PTVA127002EV-V1
High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTVA127002EV-V1
- Description
- High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz
- Min Frequency(MHz)
- 1200
- Max Frequency(MHz)
- 1400
- Peak Output Power(W)
- 700
- Gain(dB)
- 16.0
- Efficiency(%)
- 56
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Bolt Down
- Technology
- LDMOS
Features
- Broadband input and output matching
- High gain and efficiency
- Integrated ESD protection
- Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Excellent ruggedness
- Pb-free and RoHS compliant