PXAD184218FV-V1
High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz
The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design; input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanded LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PXAD184218FV-V1
- Description
- High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz
- Min Frequency(NHz)
- 1805
- Max Frequency(MHz)
- 1880
- Gain(dB)
- 16
- Efficiency(%)
- 52
- Operating Voltage(V)
- 28
- Package Category
- Earless
Features
- Asymmetrical Doherty design: Main P1dB = 130 W Typ; Peak P1dB = 290 W Typ
- Typical Pulsed CW performance; 1842.5 MHz; 28 V; Doherty configuration: Output power at P3dB = 420 W; Efficiency = 62%; Gain = 14 dB
- Capable of handling 10:1 VSWR @ 28 V; 110 W (WCDMA) output power
- Integrated ESD protection
- Pb-free; RoHS compliant