PXAE213708NB

High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz

The PXAE213708NB is a 400-watt (P3dB) LDMOS Doherty transistor intended for use in multi-standard cellular power amplifier applications in the 2110 to 2200 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product Specifications

Part Number
PXAE213708NB
Description
High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz
Min Frequency (MHz)
2110
Max Frequency(MHz)
2200
P3dB Output Power(W)
290
Gain(dB)
16.0
Efficiency(%)
52
Operating Voltage(V)
28
Package Category
Plastic
Form
Packaged Discrete Transistor
Technology
LDMOS

Features

  • Broadband internal input and output matching
  • Asymmetrical Doherty design: Main P3dB = 160 W Typ; Peak P3dB = 290 W Typ
  • Typical Pulsed CW performance; 2180 MHz; 28 V; Doherty configuration; class AB: Output power at P3dB = 400 W; Power Added Efficiency at P3dB = 60.3%; Power Gain = 13.7 dB
  • Integrated ESD protection
  • Pb-free and RoHS compliant

Technical Resources

Datasheet


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PXAE213708NB-V1
Amplifier,400W,28V,2110-2200MHz LDMOS