PXAE261908NF-V1
High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz
The PXAE261908NF is a 240-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2515 to 2675 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PXAE261908NF-V1
- Description
- High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz
- Min Frequency(NHz)
- 2515
- Max Frequency(MHz)
- 2675
- Gain(dB)
- 14
- Efficiency(%)
- 47
- Operating Voltage(V)
- 28
- Package Category
- Plastic
Features
- Output power at P3dB = 240 W
- Gain = 11.8 dB
- Efficiency = 60%
- Integrated ESD protection
- Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant