PXAE263708NB-V1
High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz
The PXAE263708NB is a 400-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching; high gain and a thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PXAE263708NB-V1
- Description
- High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz
- Min Frequency(NHz)
- 2620
- Max Frequency(MHz)
- 2690
- Gain(dB)
- 14
- Efficiency(%)
- 47
- Operating Voltage(V)
- 28
- Package Category
- Plastic
Features
- Asymmetric Doherty design: Main P1dB = 140 W Typ; Peak P1dB = 260 W Typ
- Typical pulsed CW performance; 2655 MHz; 28 V; Doherty configuration; class AB: Output power at P1dB = 200 W; Output power at P3dB = 400 W; Efficiency = 49% (POUT = 57 W avg); Gain = 15 dB (POUT = 57 W avg)
- Capable of handling 10:1 VSWR @ 32 V; 100 W (CW) output power
- Integrated ESD protection
- Pb-free and RoHS compliant