PXFC191507FC-V1
High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz
The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PXFC191507FC-V1
- Description
- High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz
- Min Frequency(NHz)
- 1805
- Max Frequency(MHz)
- 1990
- Gain(dB)
- 20
- Efficiency(%)
- 31
- Operating Voltage(V)
- 28
- Package Category
- Earless
Features
- Typical Pulsed CW performance; 1990 MHz; 28 V; class AB test: Output power at P1dB = 140 W; Efficiency = 54%; Gain = 19.5 dB
- Capable of handling 10:1 VSWR @28 V; 150 W (CW) output power
- Integrated ESD protection: Human Body Model; Class 1C (per JESD22-A114)
- Low thermal resistance
- Pb-free and RoHS compliant