WGC20630-V1A

Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz

 The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 1930 - 2020 MHz and a thermally-enhanced over-molded plastic package. 

Product Specifications

Part Number
WGC20630-V1A
Description
Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz
Max Frequency(MHz)
2020
Gain(dB)
14.8
Package Category
Plastic

Features

  • GaN on SiC HEMT Technology
  • Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pulse Width, 10% Duty Cycle, Combined Outputs
  • Output Power @ P4dB = 630 W
  • Efficiency @ P4dB = 74%
  • RoHS* Compliant

Technical Resources

Datasheet


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WGC20630-V1A
Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz