WGC40680V1A
Thermally Enhanced GaN Amplifier 500 W, 48 V, 3700 - 3980 MHz
The WGC40680 is a 500 W (P3dB) GaN on Silicon Carbide HEMT amplifier designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally enhanced package with earless flange.
Product Specifications
- Part Number
- WGC40680V1A
- Description
- Thermally Enhanced GaN Amplifier 500 W, 48 V, 3700 - 3980 MHz
- Min Frequency(MHz)
- 3700
- Max Frequency(MHz)
- 3980
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 500.0
- Gain(dB)
- 12.3
Features
- GaN on SiC HEMT Technology
- Pulsed CW Performance: 3980 MHz, 48 V, 40 μμs pulse width, 10% Duty Cycle, Combined Outputs
- Output Power @ P3dB = 500 W
- Efficiency @ P3dB = 58%
- Thermally Enhanced Package
- RoHS* Compliant