WS1A2639-V1-R3K
38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz
The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 2496 MHz to 2690 MHz. It uses a supply voltages of up to 50 V at maximum; average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.
Product Specifications
- Part Number
- WS1A2639-V1-R3K
- Description
- 38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz
- Min Frequency(NHz)
- 2496
- Max Frequency(MHz)
- 2690
- Gain(dB)
- 16
- Efficiency(%)
- 52
- Operating Voltage(V)
- 48
- Package Category
- Surface Mount
Features
- Gate bias supplies for main and peaking sub-amplifiers from either side of the device
- Integrated harmonic terminations
- Pb-free and RoHS compliant
- Recommended driver is the WSGPA01