WSGPA01-V1-R3K

10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier

The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals; it may be suitable for other applications at frequencies up to 5 GHz; restricted only by its maximum operating conditions.

Product Specifications

Part Number
WSGPA01-V1-R3K
Description
10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier
Min Frequency (MHz)
0
Max Frequency(MHz)
5000
P3dB Output Power(W)
10
Gain(dB)
18.0
Efficiency(%)
19
Operating Voltage(V)
48

Features

  • GaN on SiC HEMT technology
  • Operating frequency : up to 5 GHz
  • P3dB : up to 10 W
  • Supply voltage : up to 50 V
  • Pb-free and RoHS compliant

Technical Resources

Datasheet


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WSGPA01-V1-R3K
Transistor,5GHz,10W,GaN-SiC,T&R
WSGPA01-V1-R3K Distributors