WST33H0NC
2.4 - 2.5 GHz, 300W GaN Transistor
The WST33H0NC is a 300W packaged, partially-matched transistor utilizing The high performance, 50V, 0.25um GaN on SiC production process. The WST33H0NC operates from 2.4-2.5 GHz and targets microwave heating applications. Under class-C operation, the WST33H0NC typically achieves 300 W of saturated output power with 14 dB of large signal gain and 75% drain efficiency via a 2.4-2.5 GHz reference design. Available in a thermally-enhanced, Cu-based package, the WST33H0NC provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next-generation systems.
Product Specifications
- Part Number
- WST33H0NC
- Description
- 2.4 - 2.5 GHz, 300W GaN Transistor
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 3000
- Peak Output Power(W)
- 250
- Gain(dB)
- 21
- Efficiency(%)
- 75
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Push-Pull
Features
- DE: 75 %
- LSG: 17 dB
- S21: 26 dB
- S11: -5 dB
- S22: -6 dB
- CW operation