WST4200D

GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz

 The WST4200D is a gallium nitride (GaN) high electron mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. 

Product Specifications

Part Number
WST4200D
Description
GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Gain(dB)
17

Features

  • 17 dB Small Signal Gain at 4 GHz
  • 30 W PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 6 GHz Operation
  • High Efficiency

Technical Resources

Datasheet


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WST4200D
GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz